symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 33 40 59 75 r q jl 16 24 w junction and storage temperature range a c 3 2.1 -55 to 150 t a =70c i d a continuous drain current a maximum units parameter t a =25c t a =70c 30 drain-source voltage maximum junction-to-ambient a steady-state 15 12 40 avalanche current b 20 p d repetitive avalanche energy l=0.1mh b 50 c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current b power dissipation t a =25c gate-source voltage mj maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AO4446 30v n-channel mosfet product summary v ds (v) = 30v i d = 15a (v gs = 10v) r ds(on) < 8.5m w (v gs = 10v) r ds(on) < 14.5m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4446 uses advanced trench technology to p rovide excellent r ds(on) , low gate charge and low gate resistance. this device is ideally suited for use in pwm applications. soic-8 top view bottom view d d d d s s s g g d s alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4446 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.2 3 v i d(on) 40 a 6.9 8.5 t j =125c 11 13.5 11.8 14.5 m w g fs 27 s v sd 0.71 1 v i s 4 a c iss 1520 1825 pf c oss 306 pf c rss 214 pf r g 0.47 0.7 w q g (10v) 33.7 40 nc q g (4.5v) 17 20 nc q gs 6.2 nc q gd 10 nc t d(on) 7.2 ns t r 8.2 ns t d(off) 22 ns t f 6.7 ns t rr 24 30 ns q rr 19 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =15a total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.0 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =11a i s =1a,v gs =0v v ds =5v, i d =15a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =15a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =15a reverse transfer capacitance i f =15a, di/dt=100a/ m s a: the value of r q j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the v alue in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q j a is the sum of the thermal impedence from junction to lead r q j l and lead to ambient. d . the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa c urve provides a single pulse rating. rev 3: nov. 2010 alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4446 typical electrical and thermal characteristics 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 6 8 10 12 14 16 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =15a v gs =4.5v i d =11a 4 8 12 16 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =15a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =3.5v v gs =4v 5v 10v 4.5v alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4446 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =15a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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